Journal
NATURE PHOTONICS
Volume 16, Issue 7, Pages 479-480Publisher
NATURE PORTFOLIO
DOI: 10.1038/s41566-022-01030-x
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Controlling the refractive index of BaTiO3 thin films through ferroelectric domain switching controlled by electrical pulses is now possible. A device based on this material has been introduced for implementing low-power, high-speed and CMOS-compatible programmable phase shifters in silicon photonic chips.
Ferroelectric domain switching controlled by electrical pulses provides a controllable means to tune the refractive index of BaTiO3 thin films. Now, a device based on this material is presented that is capable of implementing low-power, high-speed and CMOS-compatible programmable phase shifters in silicon photonic chips.
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