4.8 Review

Semiconductor moire materials

Journal

NATURE NANOTECHNOLOGY
Volume 17, Issue 7, Pages 686-695

Publisher

NATURE PORTFOLIO
DOI: 10.1038/s41565-022-01165-6

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Funding

  1. US Office of Naval Research [N00014-21-1-2471]
  2. National Science Foundation (NSF) [DMR- 2114535]

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This article elaborates on the recent developments and future opportunities and challenges in fundamental research on semiconductor moire materials, with a particular focus on transition metal dichalcogenides.
This Review elaborates on the recent developments and the future opportunities and challenges of fundamental research on semiconductor moire materials, with a particular focus on transition metal dichalcogenides. Moire materials have emerged as a platform for exploring the physics of strong electronic correlations and non-trivial band topology. Here we review the recent progress in semiconductor moire materials, with a particular focus on transition metal dichalcogenides. Following a brief overview of the general features in this class of materials, we discuss recent theoretical and experimental studies on Hubbard physics, Kane-Mele-Hubbard physics and equilibrium moire excitons. We also comment on the future opportunities and challenges in the studies of transition metal dichalcogenide and other semiconductor moire materials.

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