Journal
NANOTECHNOLOGY
Volume 33, Issue 37, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1361-6528/ac7653
Keywords
quasi-freestanding; phonon assisted; electron emission; bilayer graphene; epitaxial graphene; microstructures
Funding
- NRC Research Associateship award at NRL
- Office of naval Research
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The study on quasi-freestanding bilayer epitaxial graphene devices reveals efficient electron emission assisted by phonons in low vacuum conditions, with device morphology affecting emission performance.
Electron emission from quasi-freestanding bilayer epitaxial graphene (QFEG) on a silicon carbide substrate is reported, demonstrating emission currents as high as 8.5 mu A, at similar to 200 degrees C, under 0.3 Torr vacuum. Given the significantly low turn-on temperature of these QFEG devices, similar to 150 degrees C, the electron emission is explained by phonon-assisted electron emission, where the acoustic and optical phonons of QFEG causes carrier acceleration and emission. Devices of differing dimensions and shapes are fabricated via a simple and scalable fabrication procedure and tested. Variations in device morphology increase the density of dangling bonds, which can act as electron emission sites. Devices exhibit emission enhancement at increased temperatures, attributed to greater phonon densities. Devices exhibit emission under various test conditions, and a superior design and operating methodology are identified.
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