Memristor or based on two-dimensional titanic nanosheets for multi-level storage and information processing

A huge amount of data requires the non-volatile memory (NVM) technology to exhibit large-capacity storage and fast calculation speed. To further solve the bottleneck of storage capacity and speed, nano-memristors based on two-dimensional (2D) layered materials are expected to realize NVM. This study proposes the fabrication of an Ag/2D-TiOx/Pt high-performance memristor device based on the 2D titania nanosheet material. The device demonstrates stable electrical characteristics under the direct current (DC) mode, including bipolar resistive switching (RS) behavior, multi-level memristive modes, and retention property. Also, it exhibits low switching voltage (0.42 V/-0.2 V), high R-OFF/R-ON resistance ratio (10(5)), low switching power (10(-9)W/10(-5)W), and fast response speed. More importantly, the device realizes information encoding and decoding through a multi-level storage performed by different compliance currents. Multiple devices are connected to the actual circuit to realize a storage function with information processing and programmable characteristics. This work provides a powerful platform for the 2D titania nanosheet application in NVM and information processing.

Automated summary

This study proposes a high-performance memristor device based on two-dimensional titania nanosheet material, which exhibits stable electrical characteristics, multi-level storage, and information encoding and decoding through different compliance currents.