Gate-Defined Electron Interferometer in Bilayer Graphene

We present an electron interferometer defined purely by electrostatic gating in an encapsulated bilayer graphene. This minimizes possible sample degradation introduced by conventional etching methods when preparing quantum devices. The device quality is demonstrated by observing Aharonov-Bohm (AB) oscillations with a period of h/e, h/2e, h/3e, and h/4e, witnessing a coherence length of many microns. The AB oscillations as well as the type of carriers (electrons or holes) are seamlessly tunable with gating. The coherence length longer than the ring perimeter and semiclassical trajectory of the carrier are established from the analysis of the temperature and magnetic field dependence of the oscillations. Our gate-defined ring geometry has the potential to evolve into a platform for exploring correlated quantum states such as superconductivity in interferometers in twisted bilayer graphene.

Automated summary

In this study, we have successfully implemented an electron interferometer controlled purely by electrostatic gating in encapsulated bilayer graphene. The device demonstrates a coherence length of many microns and seamless tunability of Aharonov-Bohm oscillations and carrier types. The gate-defined ring geometry also has the potential to explore correlated quantum states in twisted bilayer graphene interferometers.