Strain Quantum Sensing with Spin Defects in Hexagonal Boron Nitride

Hexagonal boron nitride is not only a promising functional material for the development of two-dimensional optoelectronic devices but also a good candidate for quantum sensing thanks to the presence of quantum emitters in the form of atom-like defects. Their exploitation in quantum technologies necessitates understanding their coherence properties as well as their sensitivity to external stimuli. In this work, we probe the strain configuration of boron vacancy centers (VB-) created by ion implantation in h-BN flakes thanks to wide-field spatially resolved optically detected magnetic resonance and submicro Raman spectroscopy. Our experiments demonstrate the ability of VB- for quantum sensing of strain and, given the omnipresence of h-BN in 2D-based devices, open the door for in situ imaging of strain under working conditions.

Automated summary

This study investigates the strain properties of boron vacancy centers in hexagonal boron nitride using optical and Raman spectroscopy techniques, demonstrating their potential for quantum sensing and in situ imaging of strain under working conditions.