Journal
JOURNAL OF CRYSTAL GROWTH
Volume 434, Issue -, Pages 25-29Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2015.10.026
Keywords
Stresses; Metalorganic vapor phase epitaxy; Quantum wells; Nitrides; Semiconducting III-V materials
Funding
- French Agency for research ANR [2011 EMMA 004 01]
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Yellow-emitting InxGa1-xN/GaN multiple quantum wells (MQWs) with different pairs of In composition and QW thickness have been grown by metal-organic chemical vapor deposition on sapphire substrates. We show that a trade-off between the MQW crystalline quality and the quantum confined Stark effect has to be found to maximize the room temperature photoluminescence efficiency. With our growth conditions, an optimum design of the MQW is obtained for x=0.21 and a QW thickness of 3.6 nm. (C) 2015 Elsevier B.V. All rights reserved.
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