Journal
JOURNAL OF CRYSTAL GROWTH
Volume 447, Issue -, Pages 36-41Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2016.04.022
Keywords
Bridgman technique; Growth from melt; Single crystal growth; Oxides; Semiconducting gallium compounds
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A new approach to beta-Ga2O3 single crystal growth was studied, using the vertical Bridgman (VB) method in ambient air, while measuring the beta-Ga2O3 melting temperature and investigating the effects of crucible composition and shape. beta-Ga2O3 single crystals 25 mm in diameter were grown in platinum rhodium alloy crucibles in ambient air, with no adhesion of the crystals to the crucible wall. Single crystal growth without a crystal seed was realized by (100) faceted growth with a growth direction perpendicular to the (100) faceted plane. (C) 2016 Elsevier B.V. All rights reserved.
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