Journal
JOURNAL OF CRYSTAL GROWTH
Volume 455, Issue -, Pages 105-110Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2016.09.074
Keywords
Crystal Morphology; Nitrides; Doping; Atomic Force Microscopy; Metalorganic chemical vapor deposition
Funding
- KACST-KAUST-UCSB Solid State Lighting Program (SSLP)
- Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB
- NSF MRSEC Program [DMR-1121053]
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We demonstrate n-type doping of GaN with Ge by MOCVD at high concentrations that are necessary to fully screen the polarization fields in c-plane InGaN/GaN quantum wells. Hall measurements show linear Ge incorporation with dopant flow rate and carrier concentrations exceeding 1x10(20) cm(-3). GaN:Ge layers exhibit excellent electron mobility, high conductivity, and contact resistivity comparable to the best unannealed contacts to Si-doped GaN. However, the surface morphology begins to degrade with Ge concentrations above 1 x 10(19) cm(-3), resulting in severe step bunching and a network of plateaus and trenches, even in layers as thin as 10 nm.
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