Progress in periodically oriented III-nitride materials

The ability to grow III-nitride structures with alternating c-plane orientation has garnered interest in using these materials for new application spaces, such as frequency conversion. An overview of recent progress in growing periodically oriented (PO) III-nitrides is discussed, including AlN, AlGaN, and GaN. Successes in fabricating thick PO GaN structures ( > 500 mm) for uses in frequency conversion are highlighted. Published by Elsevier B.V.