Journal
JOURNAL OF CRYSTAL GROWTH
Volume 456, Issue -, Pages 145-150Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2016.08.019
Keywords
Hydride vapor phase epitaxy; Chloride vapor phase epitaxy; Nitrides; Semiconducting indium compounds
Funding
- Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT) [26.5164, 26246018]
- Grants-in-Aid for Scientific Research [16K04945, 26246018] Funding Source: KAKEN
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The growth of thick InGaN layers on free-standing GaN (000 (1) over bar substrates was studied using tri-halide vapor phase epitaxy. It was found that high-indium-content InGaN can be grown under higher InCl3 input partial pressure at higher growth temperature, which allows the fabrication of a high crystalline quality InGaN layer with a smooth surface morphology. Using the growth conditions of high InCl3 input partial pressure and high growth temperature, crack- and droplet-free InGaN layers with a thickness of over 10 mu m and with an indium fraction of 0.05 were successfully grown. Although the surface showed many hillocks, the number of hillocks was reduced upon growth of thicker InGaN layers. Photoluminescence measurements confirm that thick InGaN layers could be successfully grown without degradation of the crystalline quality. (C) 2016 Elsevier B.V. All rights reserved.
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