Journal
JOURNAL OF CRYSTAL GROWTH
Volume 448, Issue -, Pages 29-35Publisher
ELSEVIER
DOI: 10.1016/j.jcrysgro.2016.03.046
Keywords
Dendrites; Growth from vapor; Industrial crystallization; Single crystal growth; Semiconducting silicon compounds
Funding
- Novel Semiconductor Power Electronics Project Realizing Low Carbon Emission Society under the Ministry of Economy, Trade and Industry (METI)
- New Energy and Industrial Technology Development Organization (NEDO)
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We investigate growth conditions to obtain high-quality SiC bulk crystals by the High-Temperature Chemical Vapor Deposition (HTCVD) method. Formation of dendrite crystals, which sometimes occurs on the growth front and degrades the material quality, is raised as an issue. We find that a bulk crystal growth under a high vertical temperature gradient, where the temperature of the back side of the bulk crystal is much lower than that of the crystal surface, suppresses the formation of dendrite crystals. Under growth conditions with a high temperature gradient, a very high-speed growth of 2.4 mm/h is achieved without the formation of dendrite crystals. Growth of a thick 4H-SiC bulk crystal without the dendrites is demonstrated and the quality of a grown crystal is evaluated. (C) 2016 Elsevier B.V. All rights reserved.
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