Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 146, Issue -, Pages -Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2022.106669
Keywords
Inorganic-organic; Oxide semiconductors; Spray pyrolysis; Passivation; Thin-film transistors
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Funding
- Division of Materials Science, Nara Institute of Science and Technology, Japan
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The reliability of solution-processed amorphous indium zinc oxide (a-IZO) thin-film transistors (TFTs) was evaluated using inorganic-organic fluorinated polysilsesquioxane (PSQ:F) passivation layers. The PSQ:F passivation layers exhibited superior barrier property and improved the stability and electrical performance of the devices.
Reliability is largely considered an important device requirement for commercial electronic devices. In this work, the reliability of solution-processed amorphous indium zinc oxide (a-IZO) thin-film transistors (TFTs) were evaluated through incorporation of inorganic-organic fluorinated polysilsesquioxane (PSQ:F) passivation deposited through spray pyrolysis (SP) and spin coating (SC) techniques. The barrier property of SP and SC PSQ:F passivation layers were examined under positive and negative bias stress tests and both devices revealed superior stability with smaller threshold voltage shift of 0.9 V/-0.4 V and 1.0 V/-0.2 V respectively, after 10000 s. In addition, both PSQ:F films were confirmed to have an excellent hydrophobic property compared to a-IZO film hindering moisture adsorption. Futheremore, XRR data demonstrates that through SP deposition technique, higher density PSQ:F passivation layer was achieved which inhibits the interaction between the ambient atmosphere and the exposed back-channel region efficiently. Enhancement in the reliability and electrical performance of a-IZO TFTs were achieved through combination of additional fluorine additives from PSQ:F with spray pyrolysis deposition technique.
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