Journal
MATERIALS LETTERS
Volume 320, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.matlet.2022.132385
Keywords
Polymorph; Ga2O3 film; Pure-phase; Sapphire substrate; RF magnetron sputtering
Funding
- Basic scientific research project of Beijing University of Posts and Telecommunications [500421356]
- Shandong Provincial Natural Science Fund [ZR2019BA025]
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In this study, epitaxial Ga2O3 films were successfully grown on sapphire substrates using RF magnetron sputtering method. The films exhibited different polymorphs depending on the substrate plane, and had a bandgap of 4.88-5.30 eV.
Epitaxial Ga2O3 films were successfully grown on sapphire substrates using RF magnetron sputtering method. XRD patterns showed that the films deposited on a-plane substrates were mixed polymorphs, the films on c-plane were pure-phase ((2) over bar 01) beta-Ga2O3, and m-, and r-planes were pure-phase (300) and (01 (1) over bar) alpha-Ga2O3, respectively. AFM and SE were measured to help determine the optimal growth conditions. The optical transmission spectra showed that the prepared Ga2O3 films on different substrate planes have a bandgap of 4.88-5.30 eV.
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