Resonant hyper-Raman scattering of light by LO phonons in wurtzite semiconductors

Theoretical treatment of resonant hyper-Raman scattering of light by LO phonons in wurtzite semiconductors is given. The hyper-Raman process was considered for the scattering geometry y(xxz)x at which it involves the two-photon transitions to the B and C excitons of the s-type. Allowance was made for different sequences of intermediate virtual states. On the example of a CdS crystal the influence of the possible dipole transitions to the deeper valence band on the frequency dependence of the scattering cross section was investigated.

Automated summary

Theoretical treatment of resonant hyper-Raman scattering of light by LO phonons in wurtzite semiconductors is provided. The hyper-Raman process involving two-photon transitions to the B and C excitons of the s-type is considered for the scattering geometry y(xxz)x. Different sequences of intermediate virtual states are taken into account. The influence of possible dipole transitions to the deeper valence band on the frequency dependence of the scattering cross section was investigated using a CdS crystal as an example.