Amorphous semi-insulating Al-doped In2O3 growth by atomic layer deposition for thin-film transistors

Article Chemistry, Multidisciplinary

Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors

Mengwei Si et al.

Summary: This work demonstrates enhancement-mode field-effect transistors using an atomically-deposited amorphous In2O3 channel with thickness as low as 0.7 nm. The controllable thickness of In2O3 at an atomic scale allows for the design of sufficient 2D carrier density in the channel, affecting threshold voltage and channel carrier density. The model of trap neutral level (TNL) explains how the Fermi level aligns in the conduction band of In2O3 due to the quantum confinement effect, as confirmed by density function theory (DFT) calculations.

NANO LETTERS (2021)

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Article Engineering, Electrical & Electronic

Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors With Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V

Mengwei Si et al.

Summary: In this work, scaled back-end-of-line (BEOL) compatible indium oxide (In2O3) transistors with significant drain current and performance are demonstrated. The high current density is achieved by controlling channel thickness and the formation of high density 2D channel at the oxide/oxide interface.

IEEE ELECTRON DEVICE LETTERS (2021)

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Article Nanoscience & Nanotechnology

Effects of Al Precursors on the Characteristics of Indium-Aluminum Oxide Semiconductor Grown by Plasma-Enhanced Atomic Layer Deposition

Seunghee Lee et al.

Summary: This study developed a PEALD process to fabricate a homogeneous IAO semiconductor film, adjusting the precursor and doping methods to control the aluminum content.

ACS APPLIED MATERIALS & INTERFACES (2021)

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Article Nanoscience & Nanotechnology

Growth Mechanisms and Morphology Engineering of Atomic Layer-Deposited WS2

Hanjie Yang et al.

Summary: The study systematically investigated the growth mechanisms of WS2, revealing a significant impact of nucleation density and film thickness. Transmission electron microscope imaging showed the coexistence and competition of lateral and vertical growth mechanisms at different growth stages.

ACS APPLIED MATERIALS & INTERFACES (2021)

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Article Materials Science, Ceramics