Low-temperature diffusion bonding of Ti3Si(Al)C2 ceramic with Au interlayer

Herein, a reliable diffusion bonding of Ti3Si(Al)C-2 ceramic is achieved by applying Au foil as an interlayer at 650 degrees C for 30 min with an axial pressure of 20 MPa. This novel method significantly decreases the bonding temperature, which is about 150 degrees C lower than the lowest bonding temperature from current research to the best of our knowledge. Maximum shear strength of 58 MPa is achieved at 650 degrees C among the bonding temperature range of 600 degrees C similar to 800 degrees C. The microstructure evolution mechanism and the relationship between microstructure and mechanical property are discussed. The facile mutual diffusion of Au with de-intercalated Al and Si from Ti3Si(Al)C-2 is considered critical in achieving sound interfacial bonding.

Automated summary

A reliable diffusion bonding of Ti3Si(Al)C-2 ceramic is achieved by using Au foil as an interlayer at a lower temperature and shorter time. This method significantly decreases the bonding temperature by about 150 degrees Celsius compared to the lowest temperature reported in current research, and achieves a higher shear strength at 650 degrees Celsius.