Journal
JOURNAL OF SOLID STATE CHEMISTRY
Volume 312, Issue -, Pages -Publisher
ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jssc.2022.123222
Keywords
Nitride; Single crystal; X-ray diffraction; Disorder; Stacking fault; Phosphor
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Single crystals of a new nitride, (Sr0.93Eu0.07)(11)B-2(Al0.275Si0.725)(40)N-59, were synthesized and analyzed for their structure. It was found that the crystal emits red light when irradiated with specific wavelengths.
Single crystals of a new nitride, (Sr0.93Eu0.07)(11)B-2(Al0.275Si0.725)(40)N-59, were synthesized by heating a mixture of binary nitride powders at 2030 degrees C under nitrogen gas at 0.85 MPa. The fundamental X-ray diffraction reflections from a single crystal were indexed with the monoclinic cell parameters a = 5.6836(4) angstrom, b = 46.772(3) angstrom, c = 5.6845(4) angstrom, and beta = 118.028(2)degrees and diffuse streaks were observed between the reflections. The crystal structure was analyzed based on a statistical average structural model with space group Cm. The structure was determined to comprise (Al/Si)N-4 tetrahedra and BN3 planar triangles forming a three-dimensional framework by sharing nitrogen atoms with Sr/Eu atoms located in the cage portions of the framework. Stacking faults in the b-axis direction and disordered atomic arrangements along the [1 0 1] direction on the a-c plane were observed by scanning transmission electron microscopy. These single crystal grains were found to emit red light when irradiated with near ultraviolet or blue light, with a maximum emission wavelength of 616 nm and a full width at half-maximum value of 106 nm in response to 450 nm light.
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