4.6 Article

Single-beam ion source enhanced growth of transparent conductive thin films

Journal

JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 55, Issue 39, Pages -

Publisher

IOP Publishing Ltd
DOI: 10.1088/1361-6463/ac7f01

Keywords

ion source; magnetron discharge; low temperature; thin film; high rate deposition

Funding

  1. National Science Foundation [1917577, 1724941]
  2. US Department of Energy Award [DE-EE0009018]
  3. Directorate For Engineering
  4. Div Of Industrial Innovation & Partnersh [1917577] Funding Source: National Science Foundation
  5. Div Of Civil, Mechanical, & Manufact Inn
  6. Directorate For Engineering [1724941] Funding Source: National Science Foundation

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A single-beam ion source was developed and used in combination with magnetron sputtering to modulate the film microstructure. This method allows for adjustable magnetron voltage and current, resulting in the formation of polycrystalline ITO thin films with improved properties.
A single-beam ion source was developed and used in combination with magnetron sputtering to modulate the film microstructure. The ion source emits a single beam of ions that interact with the deposited film and simultaneously enhances the magnetron discharge. The magnetron voltage can be adjusted over a wide range, from approximately 240 to 130 V, as the voltage of the ion source varies from 0 to 150 V, while the magnetron current increases accordingly. The low-voltage high-current magnetron discharge enables a 'soft sputtering mode', which is beneficial for thin-film growth. Indium tin oxide (ITO) thin films were deposited at room temperature using a combined single-beam ion source and magnetron sputtering. The ion beam resulted in the formation of polycrystalline ITO thin films with significantly reduced resistivity and surface roughness. Single-beam ion-source-enhanced magnetron sputtering has many potential applications in which low-temperature growth of thin films is required, such as coatings for organic solar cells.

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