High-Performance Resistive Random Access Memories Based on Two-Dimensional HAPbI4 Organic-Inorganic Hybrid Perovskite

Organic-inorganic hybrid perovskites have attracted extensive attention for potential memory applications because of their excellent properties, such as high charge carrier mobility and fast ion migration. Herein, the two-dimensional HAPbI4 perovskite with an octahedral structure and high stability was prepared by a facile solution method. Moreover, the resistive random access memory (RRAM) with the Ag/PMMA/HAPbI4/ITO structure has been successfully fabricated by spin coating and vacuum thermal evaporation. The as-prepared RRAM device based on HAPbI4 demonstrated superior resistive switching performance. The on/off ratio is as high as 105, and the corresponding retention of the device exceeds 10 000 s; furthermore, the RRAM device could be kept stable after being kept in the air for 24 weeks.

Automated summary

In this study, a two-dimensional HAPbI4 perovskite with high stability was prepared and used to fabricate a resistive random access memory (RRAM) device with superior resistive switching performance, high on/off ratio, long retention time, and stability after prolonged exposure to air.