4.6 Article

Oxygen Vacancy Formation and Interface Charge Transfer at Misfit Dislocations in Gd-Doped CeO2/MgO Heterostructures

Journal

JOURNAL OF PHYSICAL CHEMISTRY C
Volume 126, Issue 28, Pages 11735-11750

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcc.2c02009

Keywords

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Funding

  1. National Science Foundation (NSF) CAREER Award [2042311]
  2. NSF [ACI-1548562]
  3. Direct For Mathematical & Physical Scien
  4. Division Of Materials Research [2042311] Funding Source: National Science Foundation

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Among various functions of mismatched complex oxide thin films and heterostructures, their potential as next-generation electrolytes in solid oxide fuel cells is highly promising. This study investigates the atomic and electronic structures of misfit dislocations in CeO2/MgO heterostructures and their influence on oxygen vacancy formation and passage at interfaces using first-principles density functional theory calculations. The findings offer new insights into the untapped potential of oxide heterostructures.
Among numerous functionalities of mismatched complex oxide thin films and heterostructures, their application as next-generation electrolytes in solid oxide fuel cells has shown remarkable promise. In thin-film oxide electrolytes, although misfit dislocations ubiquitous at interfaces play a critical role in ionic transport, fundamental understanding of their influence on oxygen vacancy formation and passage is nevertheless lacking. Herein, we report first-principles density functional theory calculations to elucidate the atomic and electronic structures of misfit dislocations in the CeO2/MgO heterostructure for the experimentally observed epitaxial relationship. Thermodynamic stability of the structure corroborates recent results demonstrating that the 45 rotation of the CeO2 thin film eliminates the surface dipole, resulting in experimentally observed epitaxy. The energetics and electronic structures of oxygen vacancy formation near gadolinium dopants at misfit dislocations are evaluated, which demonstrate complex tendencies as compared to the grain interior and surfaces of ceria. The interface charge transfer mechanism is studied for defect-free and defective interfaces. Since the atomic and electronic structures of misfit dislocations at complex oxide interfaces and their influence on interface charge transfer and oxygen vacancy defect formation have not been studied in the past, this work offers new opportunities to unravel the untapped potential of oxide heterostructures.

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