DLTS study of the influence of annealing on deep level defects induced in xenon ions implanted n-type 4H-SiC

In this study, nitrogen-doped 4H-SiC samples were bombarded with 167 MeV xenon ions to a fluence of 1 x 10(8) cm(-2) at 300 K prior to the fabrication of Schottky barrier diodes. The implanted samples were annealed at approximately 900 degrees C for 1 h before the resistive evaporation of nickel Schottky barrier diodes. In comparing the current-voltage results of the implanted devices with as-deposited ones, generation-recombination took place in the implanted Schottky barrier diodes. Four defects (100, 120, 170, and 650 meV) were present in as-deposited Schottky barrier diodes when characterized by deep level transient spectroscopy (DLTS). In addition to the defects observed in the as-deposited samples, two additional defects with activation energies of 400 and 700 meV below the conduction band minimum were induced by Xe ions implantation. The two deep level defects present have signatures similar to defects present after irradiated by MeV electron. The two defects present after irradiation disappeared after annealing at 400 degrees C which indicate instability of the defects after annealing implanted samples.

Automated summary

In this study, nitrogen-doped 4H-SiC samples were bombarded with 167 MeV xenon ions and then annealed before the fabrication of Schottky barrier diodes. The implanted devices showed generation-recombination processes and induced two new deep level defects with similar characteristics to defects induced by MeV electron irradiation.