Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 33, Issue 26, Pages 20696-20712Publisher
SPRINGER
DOI: 10.1007/s10854-022-08880-9
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- Bolu Abant Izzet Baysal University [2022.09.03.1560]
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This study investigates the effects of diffusion annealing temperatures on the structural, morphological, electrical, and superconducting properties of Zr surface-layered Bi-2223 ceramics. The results show that the diffusion of Zr improves the crystallinity and intergranular couplings of the ceramics, leading to enhanced electrical conductivity and superconducting features. The optimal annealing temperature of 800°C is found to stabilize the superconductivity and improve the basic characteristics of the Bi-2223 superconducting systems.
This study aims to investigate the influences of diffusion annealing temperatures on structural, morphological, electrical, and superconducting features of Zr surface-layered Bi-2223 ceramics. The present study also covers an in-depth understanding of correlations between disorders and transition temperatures. The Zr diffusion is carried out via an annealing process between 650 and 840 degrees C. The observed results depict that the Zr ions can easily diffuse into the deeper level of Bi-ceramics and possible Zr/Bi substitution has occurred due to the driving force of high thermal energy. Besides, it is found that the Zr diffusion improves the general crystallinity quantities of Bi-2223 ceramic up to 800 degrees C annealing temperature. In addition, better intergranular couplings with a smoother plate-like structure are extensively observed in surface morphology for the samples annealed at 800 degrees C. Significant refinements of both basic electrical resistivity, hole carrier densities, and critical temperatures with narrow transitions are also obtained for the Zr surface-layered Bi-2223 ceramics after the 800 degrees C annealing process. The obtained improvements in critical fundamental features can be attributed to the optimum pairing mechanism, best crystal structure quality, ideal Cu-O-2 interlayer coupling strengths, and enhanced interaction between adjacent superconductive layers. Besides, the first-order derivative of electrical resistivity versus temperature graphs indicates that the best annealing temperature enables to triggers to stabilize the superconductivity in the homogeneous regions. It can be concluded that the Zr impurity diffusion at 800 degrees C is promising for the improvement in the basic features of Bi-2223 superconducting systems for future applications in superconductor technology.
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