Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 33, Issue 24, Pages 19205-19217Publisher
SPRINGER
DOI: 10.1007/s10854-022-08759-9
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- King Saud University
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In this study, MACl(0.33)FAPbI(3)-doped perovskite thin films were fabricated using a new method, and the effect of doping on the optical properties was investigated. The results showed that doping with MACl(0.33)FAPbI(3) can alter the optical properties of the films and improve the fill factor and power conversion efficiency.
(MACl(0.33)FAPbI(3))(x)(Tri)(1-x;) (Tri = FA(0.85)MA(0.10)Cs(0.05)Pb(Br0.10I0.90)(3), x = 0, 0.05, 0.1, 0.15) perovskite thin films were fabricated by a new method under an argon atmosphere. An X-ray diffraction technique was used to investigate the formed phases in different films. The effect of MACl(0.33)FAPbI(3) doping on the absorbance, transmittance, reflectance, extinction coefficient, refractive index, dielectric function, optical conductivity, dielectric loss energy function, nonlinear optical parameters, and the photoluminescence emission of formed films was studied. The optical bandgap (E-g) of the undoped film was increased from 1.53 to 1.55 eV as it was doped with different amounts of MACl(0.33)FAPbI(3). At 500 nm, the absorbance of doped film with 10% MACl(0.33)FAPbI(3) has a maximum value as compared with other doped films. A device based on the undoped film with MACl(0.33)FAPbI(3) has a short-current density (J(SC)), an open-circuit potential (V-OC), a fill factor (FF), and a power conversion efficiency (PCE) of 23.73 mA cm(-2), 0.864 V, 0.62, and 12.71%, respectively. Both FF and PCE values were enhanced to 0.676 and 14.86%, respectively, as the film doped with 5% MACl(0.33)FAPbI(3).
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