A review on current status and mechanisms of room-temperature magnetoelectric coupling in multiferroics for device applications

Magnetoelectric coupling phenomenon in multiferroics has attracted considerable research activities in the last decade due to its wide range of applications in spintronic, data storage and electrically tunable microwave devices. From the first realization of magnetoelectric coupling in Cr2O3, numerous single-phase and composite multiferroics have been explored for obtaining a stable room-temperature magnetoelectric coupling and many of them have been translated into device applications. Different magnetoelectric coupling effects are responsible for different device applications of multiferroic materials. Fundamental understanding of dynamics of these remarkable magnetoelectric coupling mechanisms in various multiferroic materials has been a prime aspect to develop new high-performance multiferroic devices. In this article, a comprehensive review on the mechanisms of breakthrough magnetoelectric coupling results in a variety of multiferroic materials has been presented with an intercomparison of their highest reported magnetoelectric coupling coefficients. A brief summary of some significant results on the room-temperature magnetoelectric coupling has been made that can be applied for practical magnetoelectric device fabrication. [GRAPHICS] .

Automated summary

The magnetoelectric coupling phenomenon in multiferroics has been extensively studied in the past decade and has found wide range of applications in spintronic, data storage and electrically tunable microwave devices. Understanding the dynamic mechanisms of magnetoelectric coupling in various multiferroic materials is crucial for developing new high-performance multiferroic devices.