Journal
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
Volume 556, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.jmmm.2022.169442
Keywords
FeRh alloy; Thin films; Epitaxy; Phase transition; Magnetism
Funding
- FAPESP, Brazil [2010/18590-0]
- UGC-DAE CSR, Indore, India [CSR-IC-ISUM-01/CRS-284/2019-20/1336]
- MHRD, India
Ask authors/readers for more resources
The effect of substrate orientation on the structural and magnetic properties of FeRh thin films is studied. FeRh films with different orientations are obtained on MgO substrates. It is found that lattice strain can tune the temperature of the antiferromagnetic-ferromagnetic phase transition, and a larger thermal hysteresis is observed.
FeRh thin films are grown on MgO(0 0 1), MgO(0 1 1) and MgO(1 1 1) single-crystal substrates at 600 degrees C by dc magnetron sputtering and post-annealed at the same temperature for 1 h. Effect of substrate orientation on structural and magnetic properties of FeRh films is studied using X-ray diffraction (Cu-K alpha and synchrotron radiation), temperature, and field dependent magnetization measurements. FeRh(0 0 1), (1 1 2), (0 1 1) orientated films with CsCl ordering are obtained on MgO(0 0 1), MgO(0 1 1) and MgO(1 1 1) substrates, respectively. Epitaxial quality of FeRh(0 0 1) is relatively better than FeRh(1 1 2) and FeRh(0 1 1) films. The FeRh(0 1 1) film grows on two orientation relationships: Nishiyama-Wassermann (NW) and Kurdjumov-Sachs (KS). Temperaturedependent out-plane XRD measurements indicate an increase in c-parameter -0.56% to 0.62% across the AF-FM phase transition. The c/a ratio indicate that FeRh(0 0 1) film has in-plane compressive strain, while FeRh(1 1 2) and FeRh(0 1 1) films have tensile strain. The c/a ratio and temperature-dependent magnetization measurements (M-T) indicate that AF-FM phase transition can be tuned by appx. 52 K (388 K to 440 K) by variation of lattice strain at FeRh/MgO interface. Thermal hysteresis of appx. 12.8 K, 17 K and 22.9 K is observed for FeRh(0 0 1), FeRh(1 1 2) and FeRh(0 1 1) thin films. Larger thermal hysteresis is expected due to relatively poor epitaxial quality of the FeRh(1 1 2) and FeRh(0 1 1) films as compared to FeRh(0 0 1) film. The larger remnant FM component is observed in nominal AF state (room temperature) in all the samples, and is expected due to combined effect of composition inhomogeneity, substrate-induced strain and defects.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available