4.7 Article

Ge p-i-n Photodiode as 60-Gbit/s Optical NRZ-OOK Data Receiver

Journal

JOURNAL OF LIGHTWAVE TECHNOLOGY
Volume 40, Issue 13, Pages 4326-4336

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2022.3161011

Keywords

Germanium; PIN photodiodes; Optical mixing; Electrodes; Optical pulses; High-speed optical techniques; Transmission lines; Germanium; impulse response; noise-equivalent power; NRZ-OOK; optical heterodyne; photodiode; silicon photonics; waveguide photodetector

Funding

  1. Ministry of Science and Technology, Taiwan [MOST 109-2221-E-002-184MY3, MOST 110-2221-E-002-100-MY3, MOST 110-2124-M-A49-003-, MOST 110-2224-E-992-001-]

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The characteristics of O-band germanium p-i-n waveguide photodetector (WPD) were analyzed, and the results showed that optimizing the transmission-line design can improve the response speed and receiving bandwidth. By reducing the transmission-line length and decreasing the inductance of the contact electrode, the performance of the photodetector can be significantly improved.
By the pulsed, heterodyned, and modulated laser illuminations, the impulse and noise responses of O-band germanium (Ge) p-i-n waveguide photodetector (WPD) with different transmission-line designs are characterized for receiving the NRZ-OOK data beyond 60 Gbit/s. The Ge lateral p-i-n WPD reveals an optical responsivity of 0.63-0.74 A/W at 1327.5 nm under -1.8 V bias.The noise equivalent power (NEP) is increased from 0.11 to 0.2 pW/root Hz by shrinking the transmission-line contact electrode length from 280 to 80 mu m. After optimizing the transmission-line designs with shorter length and less right corner number (C-perpendicular to#) between PD and bonding pad, the Ge lateral p-i-n WPD improves its RLC response to suppress its switching time with broadened receiving bandwidth. Shrinking the connecting transmission-line length from 280 mu m to 80 mu m extends the flattened S-11 spectral response from 51 to 57 GHz by up-shifting the inductor inductor-induced frequency notch from 58 to 61 GHz, as confirmed by the shrank spiral curve in the Smith chart with the decreased inductance by shortening the transmission-line electrode. The dual-wavelength optical heterodyne analysis demonstrates that the Ge p-i-n WPD significantly improves its analog receiving bandwidth from 29.5 to 44.3 GHz measured at 6-dB decay. The sub-ps laser pulse illumination observes that the Ge p-i-n WPD response shortens its impulse response from 23.14 to 19.92 ps by reducing the contact inductor length (by 200 mu m) and right corner number (C-perpendicular to#) from 4 to 2) of its electrode. When receiving the optical NRZ-OOK data stream, the long-electrode (L = 280 mu m, C-perpendicular to# = 4) device reveals only 53-Gbit/s receiving performance. The short-electrode (L = 80 mu m, C-perpendicular to# = 2) Ge lateral p-i-n WPD with significantly reduced inductance successfully receives the NRZ-OOK data beyond 56 Gbit/s and 60 Gbit/s under error-free communication criterion of BER<10(-12) and BER<10(-9), respectively.

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