Study of the Performance Enhancement of MoO3/Au Bilayer Source-Drain Electrode for Top-Contact Pentacene-Based OTFT

To achieve an improved and low-cost pentacene-based organic thin-film transistor (OTFT), we fabricated three sets of OTFT devices with a MoO3 transition metal oxide layer at the pentacene/electrode interface using a Au metal electrode. Among these devices, one device contains a single source-drain metal electrode, and in the other two devices, we inserted the MoO3 layer. We used MoO3 material in two different forms: one is a commercially available form (laboratory-prepared pure MoO3, purchased from Sigma-Aldrich), and the other is oxidized MoO3 which we prepared by oxidizing Mo filament by thermal evaporation in our laboratory. We found that the oxidized MoO3/Au bilayer source-drain electrode OTFT device exhibits better performance than the other OTFT devices we fabricated with a laboratory-prepared pure MoO3/Au bilayer source-drain electrode combination. The estimated device parameters of the oxidized MoO3/Au bilayer source-drain electrode OTFT including field-effect mobility, on/off ratio, threshold voltage and sub-threshold slope are 1.7 cm(2)v(-1)s(-1), 2.5 x 10(6), -3.5 V and 0.39 V/decade, respectively.

Automated summary

In this study, MoO3 transition metal oxide layer was used as the source-drain electrode for pentacene-based organic thin-film transistors (OTFTs). The OTFT device with oxidized MoO3/Au bilayer source-drain electrode exhibited better performance compared to other devices.