Journal
JOURNAL OF CRYSTAL GROWTH
Volume 592, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.jcrysgro.2022.126749
Keywords
A1; Growth models; Surface kinetics; A3; Hydride vapor phase epitaxy; B1; Nitrides
Funding
- MEXT-Program for Creation of Innovative Core Technology for Power Electronics Program [JPJ009777]
- JSPS KAKENHI [20 J13885]
Ask authors/readers for more resources
In this study, the effects of HVPE growth conditions on the surface morphology of n-type GaN layers were investigated. A growth model was proposed to predict the HVPE growth mode.
The effects of halide vapor phase epitaxial (HVPE) growth conditions such as input V/III ratio and substrate offcut angle on the surface morphology of n-type GaN layers grown on GaN (0001) freestanding substrates were investigated to develop a model for growing smooth surfaces. The spiral hillock density increased with increasing input V/III ratio and/or decreasing off-cut angle. The critical off-cut angle between the spiral growth and the step-flow growth depended on the vapor supersaturation calculated by thermodynamic analysis. To understand the transition of the growth mode, we proposed a Burton-Cabrera-Frank-theory-based model considering the effect of spiral growth, which was utilized to explain the obtained experimental results. The developed growth model can be effective for predicting the HVPE growth mode between the spiral growth and the step-flow growth.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available