Related references
Note: Only part of the references are listed.RRAM-Based Analog Approximate Computing
Boxun Li et al.
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS (2015)
Investigation of process parameter variation in the memristor based resistive random access memory (RRAM): Effect of device size variations
T. D. Dongale et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2015)
Causes and consequences of the stochastic aspect of filamentary RRAM
R. Degraeve et al.
MICROELECTRONIC ENGINEERING (2015)
Memristor Crossbar-Based Neuromorphic Computing System: A Case Study
Miao Hu et al.
IEEE TRANSACTIONS ON NEURAL NETWORKS AND LEARNING SYSTEMS (2014)
A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation
Shimeng Yu et al.
ADVANCED MATERIALS (2013)
A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown
Shibing Long et al.
IEEE ELECTRON DEVICE LETTERS (2013)
Leakage Current-Forming Voltage Relation and Oxygen Gettering in HfOx RRAM Devices
Kristina G. Young-Fisher et al.
IEEE ELECTRON DEVICE LETTERS (2013)
RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study
Yexin Deng et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Sneak-Path Testing of Crossbar-Based Nonvolatile Random Access Memories
Sachhidh Kannan et al.
IEEE TRANSACTIONS ON NANOTECHNOLOGY (2013)
Self-compliance-improved resistive switching using Ir/TaOx/W cross-point memory
Amit Prakash et al.
NANOSCALE RESEARCH LETTERS (2013)
STDP and STDP variations with memristors for spiking neuromorphic learning systems
T. Serrano-Gotarredona et al.
FRONTIERS IN NEUROSCIENCE (2013)
A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations
Ximeng Guan et al.
IEEE ELECTRON DEVICE LETTERS (2012)
On the Switching Parameter Variation of Metal-Oxide RRAM-Part I: Physical Modeling and Simulation Methodology
Ximeng Guan et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2012)
Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor
Ting Chang et al.
ACS NANO (2011)
HfOx/TiOx/HfOx/TiOx Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity
Z. Fang et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device
Kyungah Seo et al.
NANOTECHNOLOGY (2011)
Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells
D. Walczyk et al.
MICROELECTRONIC ENGINEERING (2011)
Optimization of sparse matrix-vector multiplication on emerging multicore platforms
Samuel Williams et al.
PARALLEL COMPUTING (2009)
Modeling of interconnect capacitance, delay, and crosstalk in VLSI
SC Wong et al.
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING (2000)
Share Paper
