Point defect creation by proton and carbon irradiation of α-Ga2O3

Films of alpha-Ga2O3 grown by Halide Vapor Phase Epitaxy (HVPE) were irradiated with protons at energies of 330, 400, and 460 keV with fluences 6 x 10(15) cm(-2) and with 7 MeV C4+ ions with a fluence of 1.3 x 10(13) cm(-2) and characterized by a suite of measurements, including Photoinduced Transient Current Spectroscopy (PICTS), Thermally Stimulated Current (TSC), Microcathodoluminescence (MCL), Capacitance-frequency (C-f), photocapacitance and Admittance Spectroscopy (AS), as well as by Positron Annihilation Spectroscopy (PAS). Proton irradiation creates a conducting layer near the peak of the ion distribution and vacancy defects distribution and introduces deep traps at E-c-0.25, 0.8, and 1.4 eV associated with Ga interstitials, gallium-oxygen divacancies V-Ga-V-O, and oxygen vacancies V-O. Similar defects were observed in C implanted samples. The PAS results can also be interpreted by assuming that the observed changes are due to the introduction of V-Ga and V-Ga-V-O.

Automated summary

Films of alpha-Ga2O3 grown by Halide Vapor Phase Epitaxy (HVPE) were characterized after irradiation with protons and C ions, revealing the introduction of defect-related energy levels and the formation of a conducting layer.