4.6 Article

Terahertz acoustic phonon Cerenkov emission in bilayer graphene

Journal

JOURNAL OF APPLIED PHYSICS
Volume 132, Issue 2, Pages -

Publisher

AIP Publishing
DOI: 10.1063/5.0091369

Keywords

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Funding

  1. Council of Scientific & Industrial Research (CSIR), Extra Mural Research Division, Human Resource and Development Group, Government of India, New Delhi [09/0112(11722)/2021-EMR-I]
  2. Department of Biotechnology (DBT), Government of India at Interdisciplinary Nanotechnology Centre (INC), Aligarh Muslim University, Aligarh, U.P, India [BT/PR1-3584/COE/34/29/2015]

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This paper presents a theoretical investigation on the generation of Cerenkov emission of terahertz acoustic phonons in bilayer graphene. The study focuses on the dependencies of phonon emission spectrum and intensity on factors such as phonon frequency, drift velocity, electron temperature, concentration, and emission angle. The results show that the magnitude of the emission spectrum increases at larger drift velocities and applied electric fields, with the peak shifting towards higher frequencies. The study highlights the significance of bilayer graphene in acousto/optoelectronic device applications and high-frequency phonon spectrometers.
We present a theoretical investigation on the generation of Cerenkov emission of terahertz acoustic phonons in bilayer graphene (BLG) in the presence of a driving dc electric field. We have numerically and analytically studied the Cerenkov phonon emission spectrum, P-spectrum(omega(p), theta), and phonon intensity, P-intensity(theta), dependence on the phonon frequency omega(p), drift velocity v(d), electron temperature T-e, concentration n, and phonon emission angle theta in BLG with and without considering the chirality of the charge carriers. We find that the magnitude of P-spectrum(omega(p), theta) increases at larger drift velocities and applied electric fields with the peak of the spectrum shifting toward the higher frequency side. The spectrum magnitude in BLG is found to be much enhanced as compared to conventional 2D semiconductors and transition metal dichalcogenides, which makes it viable for SASER and other practical device applications. The chiral nature of carriers strongly influences the P-spectrum(omega(p), theta) behavior and sharpens the spectrum peak but with a decrease in the magnitude. The chirality favors the negative emission spectrum caused by the absorption of acoustic phonons. P-spectrum(omega(p), theta) and P-intensity(theta) are found to be strongly dependent on temperature but independent of carrier concentration in the equipartition regime. The study is significant from the point of application of BLG as an acousto/optoelectronic device and high-frequency phonon spectrometers. Published under an exclusive license by AIP Publishing.

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