Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 913, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2022.165179
Keywords
ZnO; TCO; Burstein-Moss Effect; Nanorod device; Eu doping; Transport properties; Bandgap renormalization
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Funding
- National Institute of Science Education and Research, Department of Atomic Energy (DAE) , India
- University Grants Commission, India
- UGC-CSIR NET-JRF/SRF fellowship
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We investigated the impact of europium doping on the optical properties and electrical conductivity of hydrothermally grown ZnO nanorods. Europium doping widened the optical bandgap up to 0.8% due to the Burstein-Moss effect, and bandgap renormalization was observed at higher concentrations. Temperature-dependent resistivity measurements showed that the electrical conductivity of individual nanorods is a combination of thermally activated and nearest-neighbor hopping conduction processes at high and low temperatures, respectively. We successfully demonstrated that the modulation of carrier concentration in the defect D and D- bands can adjust both the bandgap and electron transport in Eu-doped ZnO nanorods.
We investigate the effect of europium doping on the optical properties and electrical conductivity of hydrothermally grown ZnO nanorods. The widening of optical bandgap with europium doping occurs because of the Burstein-Moss effect upto 0.8% and bandgap renormalization is observed at higher concentration. The temperature-dependent resistivity measurements of the individual nanorods reveal that the intrinsic electrical conductivity is a combination of thermally activated and nearest-neighbor hopping conduction processes at high and low-temperature regimes, respectively. We can successfully correlate that the modulation of carrier concentration in the defect D and D- bands can tune both bandgap and electron transport in Eu doped ZnO nanorods. (C) 2022 Elsevier B.V. All rights reserved.
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