Electrical properties of antiferroelectric Pb(Zr,Hf)O3 films fabricated by chemical solution deposition

Pb(Zr1-x Hf x )O-3 (x = 0, 0.1, 0.2, 0.5, 1) films were fabricated on Pt/Ti/SiO2/Si substrates using a chemical solution deposition process in this study. The effect of the Zr/Hf ratio on energy-storage performance was evaluated based on the measurement of P-E hysteresis loops. It is shown that the maximum polarization and the recoverable energy density decrease with the increase of the Hf concentration. The energy efficiency of the Hf-contained films is close to each other but higher than the PbZrO3 film. As a result, the Pb(Zr0.9Hf0.1)O-3 film achieved in this work exhibited the highest recoverable energy density of 11.3 J cm(-3) and a larger energy efficiency of 55% at 800 kV cm(-1), exceeding those of either PbZrO3 or PbHfO3 single-component film. This enhancement was related with the size and homogeneity of the crystal grains.

Automated summary

In this study, Pb(Zr1-x Hf x )O-3 films with different Hf concentrations were fabricated using a chemical solution deposition process. The impact of Hf concentration on energy-storage performance was evaluated. The results showed that the maximum polarization and recoverable energy density decreased with increasing Hf concentration, while the energy efficiency remained relatively high. The Pb(Zr0.9Hf0.1)O-3 film achieved the highest recoverable energy density and energy efficiency, surpassing those of single-component films, attributed to the size and homogeneity of the crystal grains.