Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 61, Issue 9, Pages -Publisher
IOP Publishing Ltd
DOI: 10.35848/1347-4065/ac8535
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Funding
- National Key Research and Development Program of China [2021YFB3600901, 2018YFE0125700]
- National Natural Science Foundation of China [61922001, 61927806]
- Key Research and Development Program of Guangdong Province [2020B010171002]
- Beijing Municipal Science and Technology Project [Z211100004821007]
- Chinese Postdoctoral Science Foundation [8206300500]
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This study clarifies the shift of Fermi level and conductivity type in heavily C-doped GaN, and attributes the reverse transition to self-compensation and other donor-type compensation centers introduced along with C doping.
It is empirically well acknowledged that C doping makes GaN high-resistive. However, the detailed doping type and high-resistivity mechanisms of C doped GaN, which are extremely essential for GaN power electronics, still remain unclear. In this work, we clarify the mutative (from downward to upward) shift of the Fermi level and the n-type conductivity in heavily C doped GaN grown by MOCVD for the C concentration increases over a critical value, by combining photo-assisted KPFM and Seebeck coefficient measurements. We also discuss the reverse transition of Fermi level and ultimately n-type conductivity should be attributed to the self-compensation and other donor-type compensation centers introduced along with C doping. (C) 2022 The Japan Society of Applied Physics
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