Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 61, Issue 8, Pages -Publisher
IOP Publishing Ltd
DOI: 10.35848/1347-4065/ac7fcf
Keywords
chemical vapor transport; molybdenum disulfide; half-wave rectification; oxygen plasma treatment; p-n homogeneous junctiontransition metal dichalcogenide
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Funding
- Kyushu Institute of Technology-National Taiwan University of Science and Technology Joint Research Program [Kyutech-NTUST-11002]
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In this study, MoS2 bulk was synthesized using the chemical vapor transport method, and the thickness of MoS2 flakes was limited through mechanical exfoliation. The MoS2 characteristics were transformed from n-type to p-type using oxygen plasma treatment to fabricate a p-n homogeneous junction, and the charge neutrality point shift was successfully demonstrated using FET measurement. The MoS2 p-n homogeneous junction diode showed excellent p-n characteristic curve and performed great rectifying behavior in the half-wave rectification experiment.
The chemical vapor transport method was used in this research to synthesize MoS2 bulk. Through mechanical exfoliation, we limited the thickness of MoS2 flakes from 1 to 3 mu m. In order to fabricate a p-n homogeneous junction, we used oxygen plasma treatment to transform the MoS2 characteristics from n-type to p-type to fabricate a p-n homogenous junction and demonstrate the charge neutrality point shift from -80 to +102 V successfully using FET measurement. The MoS2 p-n homogeneous junction diode showed an excellent p-n characteristic curve during the measurements and performed great rectifying behavior with 1-10 V-pp in the half-wave rectification experiment. This work demonstrated that MoS2 flake had great potential for p-n diodes that feature significant p-n characteristics and rectifying behavior.
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