Molybdenum disulfide homogeneous junction diode fabrication and rectification characteristics

The chemical vapor transport method was used in this research to synthesize MoS2 bulk. Through mechanical exfoliation, we limited the thickness of MoS2 flakes from 1 to 3 mu m. In order to fabricate a p-n homogeneous junction, we used oxygen plasma treatment to transform the MoS2 characteristics from n-type to p-type to fabricate a p-n homogenous junction and demonstrate the charge neutrality point shift from -80 to +102 V successfully using FET measurement. The MoS2 p-n homogeneous junction diode showed an excellent p-n characteristic curve during the measurements and performed great rectifying behavior with 1-10 V-pp in the half-wave rectification experiment. This work demonstrated that MoS2 flake had great potential for p-n diodes that feature significant p-n characteristics and rectifying behavior.

Automated summary

In this study, MoS2 bulk was synthesized using the chemical vapor transport method, and the thickness of MoS2 flakes was limited through mechanical exfoliation. The MoS2 characteristics were transformed from n-type to p-type using oxygen plasma treatment to fabricate a p-n homogeneous junction, and the charge neutrality point shift was successfully demonstrated using FET measurement. The MoS2 p-n homogeneous junction diode showed excellent p-n characteristic curve and performed great rectifying behavior in the half-wave rectification experiment.