Single-atom microscopy in wide-bandgap nitrides

Wide bandgap III-nitrides, such as cubic boron nitride and wurtzite-type aluminum nitride, are promising systems for optoelectronics. To extend their luminescent properties, we doped single Ce atoms into III-nitride single crystals using reactive flux with a temperature gradient method at high-pressure and high-temperature conditions. To fully understand such properties in a large size-mismatch system, it is critically important to determine the point-defect structures of single dopants, their spatial distribution in three dimensions, and their atomistic dynamics at an atomic level. This review discusses point defect structures and their dynamics in III-nitrides using single-atom-sensitive scanning transmission electron microscopy, and the recent progress in the related field of electron microscopy.

Automated summary

This review discusses the point defect structures and their dynamics in wide bandgap III-nitrides, as well as the recent progress in electron microscopy.