Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 69, Issue 7, Pages 1675-1682Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2022.3173061
Keywords
Silicon carbide; Ions; Radiation effects; Degradation; Leakage currents; Pins; Schottky diodes; Heavy ion irradiation; leakage current degradation; monoisotopic; Schottky diodes; silicon carbide; single-event burnout (SEB); single-event effects
Funding
- General Support Technology Programme (GSTP) European Space Agency (ESA)
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The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes were compared under heavy ion irradiation. Both types of devices experienced leakage current degradation as well as single-event burnout events. The results were comparable.
The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as single-event burnout events. The results were comparable, although the data may indicate a marginally lower thresholds for the isotopic enriched devices at lower linear energy transfer (LET). Slightly higher reverse bias threshold values for leakage current degradation were also observed compared to previously published work.
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