Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 69, Issue 7, Pages 3807-3810Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2022.3177585
Keywords
beta-Ga2O3; metal-oxide-semiconductor field-effect phototransistor; solar-blind; zero gate bias
Funding
- National Key Research and Development Program of China [2018YFB0406504]
- National Natural Science Foundation of China [61874083]
- Natural Science Basic Research Program of Shaanxi [2021JC-24]
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This work demonstrates a high-performance beta-Ga2O3-based solar-blind metal-oxide-semiconductor field-effect phototransistor (SBPT). The SBPT exhibits excellent photoelectrical properties at a gate voltage of 0 V, including a large photo-dark current ratio, high responsivity, large external quantum efficiency, and high detectivity. The ultrahigh photoresponse performance of the device suggests that SBPT working at a gate bias of 0 V provides a potential route for the application of solar-blind photodetectors.
In this work, a high-performance beta-Ga2O3-based solar-blind metal-oxide-semiconductor field-effect phototransistor (SBPT) is demonstrated. SBPT exhibits excellent photoelectrical properties when the gate voltage (V-GS) bias is at 0 V, including a large photo- dark current ratio ( PDCR) of 1.5 x 10(6), a high responsivity (R) of 1.3 x 10(7) A/W, a large externalquantum efficiency (EQE) of 6.4x10(7)% and a high detectivity (D*) of 4.8 x 1018 Jones. Decay time (tau(d)) is extracted to be 454 ms. The ultrahigh photoresponse performance of the device illustrates that SBPT working at the gate bias of 0 V provides a potential route for the application of solar-blind photodetector (SBPD).
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