Methods for Extracting the Temperature-and Power-Dependent Thermal Resistance for SiGe and III-V HBTs From DC Measurements: A Review and Comparison Across Technologies

Many different methods have been proposed in the literature for the extraction of the thermal resistance of heterojunction bipolar transistors (HBTs). This review presents a detailed evaluation and discussion of several widely used methods. Special emphasis is put on a generalized analysis of the underlying assumptions, suitable operating point range, and necessary measurement effort of each method. The accuracy of each method is determined by applying it to data based on circuit simulations of advanced SiGe and III-V HBT technologies. Experimental data from those technologies are used to highlight practical issues. A guideline for the selection of the most suitable method in practice is also given.

Automated summary

This review evaluates and discusses several widely used methods for extracting the thermal resistance of heterojunction bipolar transistors (HBTs), including the underlying assumptions, suitable operating point range, and necessary measurement effort. The accuracy of each method is determined by applying it to data based on circuit simulations and experimental data from advanced SiGe and III-V HBT technologies. A guideline for selecting the most suitable method in practice is also provided.