Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 69, Issue 8, Pages 4646-4650Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2022.3178967
Keywords
a-IGZO thin film transistors; BCM learning rules; persistent photoconductivity (PPC); photoelectronic synapses
Funding
- National Key Research and Development Program of China [2019YFB2205400, 2021YFA1202600]
- National Natural Science Foundation of China [62074075, 62174082]
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In this study, amorphous indium gallium zinc oxide transistors were used to mimic light-induced short-term synaptic plasticity and successfully realize BCM learning rules. This is of great significance for the development of photoelectronic neuromorphic systems with sophisticated learning rules.
Hardware implementation of Bienenstock-Cooper-Munro (BCM) learning rules would be of great implications toward artificial intelligent systems. In this work, amorphous indium gallium zinc oxide (a-IGZO)-based photoelectronic neuromorphic transistors were proposed for mimicking BCM learning rules. A SiO2 electrolyte film with a large electric-double-layer capacitance (0.33 mu F/cm(2)) was used for the gate dielectric film. Light induced short-term synaptic plasticity can be mimicked by such device, including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and high-pass temporal filtering. More importantly, BCM learning rules are realized based on this photoelectronic neuromorphic transistor. These results would provide a step forward the development of photoelectronic neuromorphic systems with sophisticated learning rules.
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