A Novel Gate-to-Source ESD Protection Clamp for GaN HEMT

Article Engineering, Electrical & Electronic

Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-on-SiC HEMTs

Feiyuan Yang et al.

Summary: The breakdown mechanism in 0.25-μm gate length AlGaN/GaN-on-SiC transistors is investigated using the drain current injection technique. The results show that breakdown can be divided into two stages, which are related to gate voltage levels and material characteristics.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

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Article Engineering, Electrical & Electronic

on-Resistance Analysis of GaN Reverse-Conducting HEMT With Distributive Built-In SBD

Jin Wei et al.

Summary: The GaN reverse-conducting high-electron-mobility transistor (RC-HEMT) with distributive Schottky contacts offers low-loss freewheeling path and reduced on-resistance, approaching the levels of an HEMT/SBD pair. By investigating the factors influencing the on-resistance of RC-HEMT, it is found that proper geometry scaling and patterning can significantly reduce on-resistance and bring it closer to that of an HEMT.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

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Article Engineering, Electrical & Electronic

Improving Gate Reliability of 6-In E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment

Nan Sun et al.

Summary: By using a method of mixed oxygen and fluorine plasma pretreatment combined with selected bi-layer gate dielectrics, the performances of partially recessed-gate MIS-HEMTs have been improved, showing significantly boosted threshold voltage and gate breakdown voltage under both bias and temperature stresses. Remarkably reduced threshold voltage shift is observed at high temperature of 250 degrees C.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

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Article Engineering, Electrical & Electronic

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress

X. B. Xu et al.

Summary: The study investigated the ESD effects on E-mode AlGaN/GaN HEMTs with p-GaN gate under repetitive TLP pulses, revealing that the electrical characteristics of the devices degraded gradually as TLP pulses increased. The performance degradation and recovery of the devices were attributed to the trapping and releasing processes of electrons in the p-GaN layer and AlGaN barrier layer, which altered the electric field distribution under the gate.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2021)

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Article Engineering, Electrical & Electronic