Related references
Note: Only part of the references are listed.8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer
Jie-Long Liu et al.
APPLIED PHYSICS LETTERS (2022)
7.05 W/mm Power Density Millimeter-Wave GaN MIS-HEMT With Plasma Enhanced Atomic Layer Deposition SiN Dielectric Layer
Sheng Zhang et al.
IEEE ELECTRON DEVICE LETTERS (2021)
Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE
Brian Romanczyk et al.
APPLIED PHYSICS LETTERS (2021)
Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT
Jeong-Sun Moon et al.
IEEE ELECTRON DEVICE LETTERS (2021)
Millimeter-Wave AlGaN/GaN HEMTs With 43.6% Power-Added-Efficiency at 40 GHz Fabricated by Atomic Layer Etching Gate Recess
Yichuan Zhang et al.
IEEE ELECTRON DEVICE LETTERS (2020)
Al0.65Ga0.35N/Al0.4Ga0.6N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm
Hao Xue et al.
IEEE ELECTRON DEVICE LETTERS (2020)
RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band
Andrew J. Green et al.
IEEE ELECTRON DEVICE LETTERS (2020)
Enhancement-Mode InAlN/GaN Power MOSHEMT on Silicon With Schottky Tri-Drain Extension
Yi-Ping Huang et al.
IEEE ELECTRON DEVICE LETTERS (2020)
Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature
Qing Zhu et al.
IEEE ACCESS (2020)
Superior Performance of 5-nm Gate Length GaN Nanowire nFET for Digital Logic Applications
Yuanchen Chu et al.
IEEE ELECTRON DEVICE LETTERS (2019)
Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier
Anna Malmros et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation
Kathia Harrouche et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2019)
Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs
Brian Romanczyk et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
High Breakdown-Voltage (>2200 V) AlGaN-Channel HEMTs With Ohmic/Schottky Hybrid Drains
Weihang Zhang et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2018)
Power Measurement Setup for On-Wafer Large Signal Characterization Up to Q-Band
R. Kabouche et al.
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS (2017)
Millimeter-Wave Power AlGaN/GaN HEMT Using Surface Plasma Treatment of Access Region
Minhan Mi et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
Reliability and failure analysis in power GaN-HEMTs: an overview
Matteo Meneghini et al.
2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) (2017)
ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT
R. Aubry et al.
IEEE ELECTRON DEVICE LETTERS (2016)
W-Band MMIC PA With Ultrahigh Power Density in 100-nm AlGaN/GaN Technology
Wu Shaobing et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
AlGaN/GaN HEMTs on Silicon With Hybrid Schottky-Ohmic Drain for RF Applications
Chuan-Wei Tsou et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
Ultrahigh-Speed GaN High-Electron-Mobility Transistors With fT/fmax of 454/444 GHz
Yan Tang et al.
IEEE ELECTRON DEVICE LETTERS (2015)
Drain E-Field Manipulation in AlGaN/GaN HEMTs by Schottky Extension Technology
Yi-Wei Lian et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
A Compact 30-W AlGaN/GaN HEMTs on Silicon Substrate With Output Power Density of 8.1 W/mm at 8 GHz
Min-Seong Lee et al.
IEEE ELECTRON DEVICE LETTERS (2014)
Schottky Source/Drain InAlN/AlN/GaN MISHEMT With Enhanced Breakdown Voltage
Qi Zhou et al.
IEEE ELECTRON DEVICE LETTERS (2012)
AlGaN/GaN HEMTs on Silicon With Hybrid Schottky-Ohmic Drain for High Breakdown Voltage and Low Leakage Current
Yi-Wei Lian et al.
IEEE ELECTRON DEVICE LETTERS (2012)
Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors
Bin Lu et al.
IEEE ELECTRON DEVICE LETTERS (2010)
Schottky-Ohmic Drain AlGaN/GaN Normally Off HEMT With Reverse Drain Blocking Capability
Chunhua Zhou et al.
IEEE ELECTRON DEVICE LETTERS (2010)
Deep-Submicrometer AlGaN/GaN HEMTs With Slant Field Plates
Y. Pei et al.
IEEE ELECTRON DEVICE LETTERS (2009)
AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode
Eldad Bahat-Treidel et al.
IEEE ELECTRON DEVICE LETTERS (2009)
55% PAE and high power Ka-band GaNHEMTs with linearized transconductance via n+ GaN source contact ledge
J. S. Moon et al.
IEEE ELECTRON DEVICE LETTERS (2008)
High-power AlGaN/GaN HEMTs for Ka-band applications
T Palacios et al.
IEEE ELECTRON DEVICE LETTERS (2005)
Influence of gate-leakage current on drain current collapse of unpassivated GaN/AlGaN/GaN high electron mobility transistors -: art. no. 253511
P Kordos et al.
APPLIED PHYSICS LETTERS (2005)
30-W/mm GaNHEMTs by field plate optimization
YF Wu et al.
IEEE ELECTRON DEVICE LETTERS (2004)
9.4-W/mm power density,AlGaN-GaN HEMTs on free-standing GaN substrates
KK Chu et al.
IEEE ELECTRON DEVICE LETTERS (2004)
High performance 0.14 mu m gate-length AlGaN/GaN power HEMTs on SiC
GH Jessen et al.
IEEE ELECTRON DEVICE LETTERS (2003)