Improvement of Electrical Performance in Solution-Processed InZnO Thin-Film Transistor With a Radio Frequency O2 Triggered Multistacked Architecture

A method for radio frequency oxygen (O-2) plasma-assisted treatment of indium zinc oxide (IZO) films with a multistacked architecture fabricated by a lowtemperature (200 degrees C) solution process is investigated. We demonstrate that radio frequency O-2 plasma-assisted posttreatment technology can improve themobility and stability of IZO thin-film transistors (TFTs). The activity layers were formed by spin coating and subsequently thermally annealed at a low temperature of 200 degrees C, followed by O-2-plasma posttreatment process, to form the O-2 triggered multistacked architecture. The TFT devices plasma-treated for 3 min exhibit improved electrical characteristics, with a mobility of 7.09 +/- 0.24 cm(2)/Vs, an ONOFF ratio of (1.21 +/- 1.22) x 10(6), a threshold voltage of -0.22 +/- 0.35 V, and a subthreshold swing of 0.34 +/- 0.02 V/dec. The improved results offered by the O-2 plasma treatment led to a higher mobility and ON/ OFF ratio compared to sample device without this process. The successful fabrication of radio frequency O-2 triggered multistacked architecture-based IZO TFTs showing the practical potential of high-performance low-temperature solution-processed preparation technology and radio frequency O-2 plasma-assisted treatment for electrical device application.

Automated summary

This study investigates a method for radio frequency oxygen plasma treatment of IZO films, showing that this posttreatment technology can improve the mobility and stability of IZO thin-film transistors. The process involves spin coating and thermal annealing to form the active layers, followed by O-2 plasma posttreatment to create a multistacked architecture triggered by O-2. The plasma-treated TFT devices exhibit improved electrical characteristics compared to untreated samples.