Journal
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume 32, Issue 6, Pages 656-659Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMWC.2022.3166682
Keywords
Electrodes; Acoustics; Resonant frequency; Aluminum nitride; III-V semiconductor materials; Metals; Film bulk acoustic resonators; 5G; acoustic filters; aluminum nitride; MEMS; mm-wave; piezoelectric resonators
Categories
Funding
- U.S. National Science Foundation [2133388, 1941183]
- Directorate For Engineering
- Div Of Industrial Innovation & Partnersh [1941183] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [2133388] Funding Source: National Science Foundation
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In this work, a new class of thickness extensional microelectromechanical resonator called overmoded bulk acoustic resonator (OBAR) is proposed for filtering applications in the 5G millimeter wave spectrum. The OBAR operates in a second overtone thickness mode, distributing acoustic energy evenly between layers. Compared to traditional resonators, the OBAR has thicker piezo and metal layers, enabling higher frequency devices.
In this work, we present a new class of thickness extensional microelectromechanical resonator, the overmoded bulk acoustic resonator (OBAR) for filtering applications in the 5G millimeter wave (mm-wave) spectrum. This resonator operates in a second overtone thickness mode with approximately equal thickness electrodes and piezoelectric layer so that acoustic energy is distributed evenly between the different layers. Compared to a fundamental mode at a fixed frequency, the OBAR possess a 3x thicker piezo layer and 5-10x thicker metal electrodes, enabling manufacturable 30-60 GHz devices. We demonstrate the OBAR experimentally through fabrication of a Pt-AlN-Al device with electromechanical-coupling coefficient ( $k_{t}(2))$ of 1.7%, and series resonance quality factor (Q $_{s}$ ) of 110 at 33 GHz.
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