Journal
IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume 58, Issue 4, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2022.3162027
Keywords
Dark current; Substrates; Avalanche photodiodes; Indium phosphide; III-V semiconductor materials; Photoconductivity; Photonics; Linear mode avalanche photodiodes; separate absorption; charge; and multiplication; AlGaAsSb; AlInAsSb; impact ionization; multiplication gain; dark current
Categories
Funding
- Directed Energy-Joint Technology Office (DE-JTO) [N00014-17-1-2440]
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This article provides an overview of the progress made in developing LmAPDs on InP substrates using Sb-based multipliers for the SWIR spectral region. The key figures of merit and technical challenges associated with SACM APDs are discussed. Results regarding impact ionization, multiplication gain, dark current, and excess noise of AlGaAsSb and AlInAsSb multipliers are summarized.
We provide an overview of our progress on the development of linear mode avalanche photodiodes (LmAPDs) on InP substrates using antimony (Sb)-based multipliers for short-wavelength infrared (SWIR) spectral region. We identify the key figures of merit of LmAPDs to provide higher sensitivity and speed for applications like light detection and ranging (LiDAR) and remote sensing. We discuss the design of separate absorption, charge, and multiplication (SACM) APDs that are used for narrow gap absorption. We summarize our results on the impact ionization, multiplication gain, dark current, and excess noise of AlGaAsSb and AlInAsSb multipliers lattice-matched to InP substrates. Finally, we identify the key technical challenges associated with the development of SACM APDs on InP substrates.
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