Journal
CHINESE PHYSICS B
Volume 31, Issue 12, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1674-1056/ac8729
Keywords
InAs; GaSb type-II superlattice; molecular beam epitaxy; interface; mid-wave infrared
Categories
Funding
- Beijing Scholars Program
- Research Project of Beijing Education Committee
- National Natural Science Foundation of China
- Research Project of Beijing Information Science & Technology University
- [74A2111113]
- [KM202111232019]
- [62105039]
- [2022XJJ07]
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In this study, the influence of InSb interface engineering on the crystal quality and optical properties of strain-balanced InAs/GaSb type-II superlattices has been systematically investigated. The results show that increasing the thickness of InSb interface leads to higher compressive strain and narrower bandgap in the superlattice. By optimizing the InSb interface, a high-quality crystal with well-defined surface and interface has been obtained.
We systematically investigate the influence of InSb interface (IF) engineering on the crystal quality and optical properties of strain-balanced InAs/GaSb type-II superlattices (T2SLs). The type-II superlattice structure is 120 periods InAs (8 ML)/GaSb (6 ML) with different thicknesses of InSb interface grown by molecular beam epitaxy (MBE). The high-resolution x-ray diffraction (XRD) curves display sharp satellite peaks, and the narrow full width at half maximum (FWHM) of the 0th is only 30-39 arcsec. From high-resolution cross-sectional transmission electron microscopy (HRTEM) characterization, the InSb heterointerfaces and the clear spatial separation between the InAs and GaSb layers can be more intuitively distinguished. As the InSb interface thickness increases, the compressive strain increases, and the surface bright spots appear to be more apparent from the atomic force microscopy (AFM) results. Also, photoluminescence (PL) measurements verify that, with the increase in the strain, the bandgap of the superlattice narrows. By optimizing the InSb interface, a high-quality crystal with a well-defined surface and interface is obtained with a PL wavelength of 4.78 mu m, which can be used for mid-wave infrared (MWIR) detection.
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