4.7 Article

Enhanced microwave absorbing performance of Ni-containing SiCN ceramics by constructing multiple interfaces and in-situ generating MWCNTs

Journal

CERAMICS INTERNATIONAL
Volume 48, Issue 22, Pages 33871-33883

Publisher

ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2022.07.335

Keywords

EMW absorption Properties; In-situ generation; SiCN ceramic; PDCs; Multi-walled carbon nanotubes

Funding

  1. Shandong Provincial Natural Science Foundation [ZR2020LFG007]

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Conductive Ni-containing SiCN ceramics with a 3D conductive network structure were synthesized using a facile PDCs route, leading to enhanced electromagnetic wave absorption performance.
Ni-containing SiCN ceramics as microwave absorbing materials were successfully synthesized by facile polymer derived ceramics (PDCs) route using nickel acetates tetrahydrate (Ni(Ac)(2)center dot 4H(2)O) and polysilazane (PSZ) as raw materials and pyrolyzing at 1200 degrees C. After introducing Ni(Ac)(2)center dot 4H(2)O, a large number of multi-walled carbon nanotubes (MWCNTs) were in-situ formed in Ni-containing SiCN ceramics. Besides, some crystalline phases, such as Si3N4, beta-SiC, Ni2Si, Si2N2O and turbostratic carbon, were observed. The 3D conductive network constructed by the MWCNTs and multiple heterogeneous interfaces formed by various phases were generated in SiCN matrix, which enhanced the electromagnetic wave (EMW) absorbing performance of Ni-containing SiCN ceramics. The morphology and electromagnetic parameters of Ni-containing SiCN ceramics could be effectively regulated by changing the addition content of Ni(Ac)(2)center dot 4H(2)O. The Ni-containing SiCN ceramics with the Ni(Ac)2 center dot 4H(2)O addition content of 15 wt% presented the best electromagnetic wave absorption property. Its minimum reflection loss (RLmin) reached -60.71 dB at 9.44 GHz with the thickness of 2.20 mm and effective absorption bandwidth (EAB) broadened to 4.36 GHz (13.64-18 GHz) at 1.38 mm. The excellent properties should be mainly attributed to the synergistic effects of good impendence matching, conduction loss and polarization relaxation loss.

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