4.6 Article

Influence of intrinsic or extrinsic doping on charge state of carbon and its interaction with hydrogen in GaN

Journal

APPLIED PHYSICS LETTERS
Volume 120, Issue 24, Pages -

Publisher

AIP Publishing
DOI: 10.1063/5.0093514

Keywords

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Funding

  1. National Key Research and Development Program of China [2021YFB3600901, 2018YFE0125700]
  2. National Natural Science Foundation of China [61922001, 61927806]
  3. Key Research and Development Program of Guangdong Province [2020B010171002]
  4. Beijing Municipal Science and Technology Project [Z211100004821007]
  5. Chinese Postdoctoral Science Foundation [8206300500]
  6. NSF [DMR-1157490, DMR-1644779]
  7. State of Florida

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This study demonstrates that C doping methods have a significant influence on the charge state of C N and the interaction between H and C in GaN. Different doping methods lead to changes in the charge state of C N and the formation of C-H complexes.
It has been established that the formation of point defects and their behaviors could be regulated by growth details such as growth techniques and growth conditions. In this work, we prove that C doping approaches have great influence on the charge state of C N, thus the interaction between H and C in GaN. For GaN with intrinsic C doping, which is realized by reducing the V/III ratio, C N mainly exists in the form of C N - charged from the higher concentration of V N and, thus, may attract H + by coulomb interaction. Whereas for the extrinsically C doped GaN with propane as the doping source, the concentration of V N is reduced, and C N mainly exists in neutral charge state and, thus, nearly does not attract H ions. Therefore, we demonstrate that the interplay between H and C atoms is weaker for the extrinsically C doped GaN compared to the intrinsically doped GaN, thus gives a clear picture about the different charge states of C N and the formation of C-H complexes in GaN with different C doping approaches. Published under an exclusive license by AIP Publishing.

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