Tunable terahertz phase shifter based on GaAs semiconductor technology

We devised an electronically controllable plasmonic modulator capable of changing the phase of the transmitted electromagnetic wave. It is based on a well-established GaAs semiconductor technology. We demonstrate the phase tunability of the device over the range of up to 41 degrees at the insertion loss of -2.2 dB. The phase shifter operates at frequencies of up to 0.27 THz and temperatures of up to 80 K. The design is readily scalable to a planar phased array-a key component in beamforming technologies used in THz communication. Published under an exclusive license by AIP Publishing.

Automated summary

We have devised an electronically controllable plasmonic modulator based on GaAs semiconductor technology, capable of changing the phase of the transmitted electromagnetic wave. We demonstrated its phase tunability up to 41 degrees at an insertion loss of -2.2 dB. The phase shifter operates at frequencies up to 0.27 THz and temperatures up to 80 K, with the potential for scalability to a planar phased array.